| PART |
Description |
Maker |
| ATMEGA328P-20AU TS83C51RC2ZZZ-MIED TS83C51RC2ZZZ-M |
8-bit Atmel Microcontroller with 4/8/16K Bytes In-System Programmable Flash
8-BIT, MROM, 40 MHz, MICROCONTROLLER, PQFP44
8-BIT, MROM, 30 MHz, MICROCONTROLLER, PQCC44
High Endurance Non-volatile Memory Segments
|
ATMEL Corporation
TEMIC SEMICONDUCTORS
|
| M35101-W4 M35101 M35101-C20 M35101-C30 M35101-S4 |
Contactless Memory Chip 13.56 MHz / 2048-bit High Endurance EEPROM
Contactless Memory Chip 13.56 MHz, 2048-bit High Endurance EEPROM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| ST1336 ST1335 4150 |
Memory Card IC 272 bit High Endurance EEPROM With Advanced Security Mechanisms
From old datasheet system
|
STMicro
|
| CY14B108M-ZSP20XC CY14B108K CY14B108K-ZS20XC CY14B |
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP
512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
|
CYPRESS SEMICONDUCTOR CORP
Cypress Semiconductor, Corp.
|
| EKMG500E100ME11D EKMG201E221MMP1S EKMG201E100MJ16S |
MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS
Endurance with ripple current 1,000 to 2,000 hours at 105
Endurance with ripple current 1,000 to 2,000 hours at 105
Standard, Downsized, 105?
|
Nippon Precision Circuits Inc
Nichicon corporation
Nippon Precision Circuits I...
Nippon Precision Circui...
United Chemi-Con, Inc.
|
| 1688094 |
Total Endurance v5.00 Quick Start Guide
|
Microchip Technology
|
| P11C68-35 P10C68-35CG P10C68-35IG P10C68-IG P10C68 |
CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM 的CMOS / SNOS非易失性SRAM的高性能8亩8非易失性静态RAM
|
Zarlink Semiconductor Inc.
Zarlink Semiconductor, Inc.
|
| DS1345YL-70-IND DS1345YP-70IND DS1345ABP-70IND |
128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34
1024k Nonvolatile SRAM with Battery Monitor 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
|
Maxim Integrated Products, Inc.
|
| CAT24C44S-TE13 CAT24C44LA-G |
16 X 16 NON-VOLATILE SRAM, 375 ns, PDSO8
16 X 16 NON-VOLATILE SRAM, 375 ns, PDIP8
|
ON SEMICONDUCTOR
|
| EP1K50TC144-1DX EP1K50TI144-1DX EP1K50FC484-2F EP1 |
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SC-70 T&R
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SOT-23 T&R
Dual LDO with Low Noise, Low IQ, and High PSRR; Temperature Range: -40°C to 85°C; Package: 10-DFN
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SC-70 T&R
Field Programmable Gate Array (FPGA) 现场可编程门阵列（FPGA
Field Programmable Gate Array (FPGA) 现场可编程门阵列FPGA
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 6-SC-70 T&R 现场可编程门阵列（FPGA
Single Volatile 32-Tap Digitally Controlled Potentiometer (XDCP™); Temperature Range: -40°C to 85°C; Package: 5-SOT-23 T&R
|
Taiyo Yuden Co., Ltd.
Nihon Inter Electronics, Corp.
Vectron International, Inc.
Samsung Semiconductor Co., Ltd.
|
